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SUD50N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
2.0
100
V GS = 10 V
I D = 20 A
1.7
T J = 150 °C
1.4
1.1
0.8
10
T J = 25 °C
0.5
- 50
- 25
0 25 50 75 100 125
150
175
1
0.3 0.6 0.9 1.2
1.5
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
125
200
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
100
Limited by r DS(on)
10 μs
100 μs
75
50
25
Limited By Package
10
1
T C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
dc
0
0
25
50
75
100
125
150
175
0.1
0.1
1 10
50
2
T C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
V DS - Drain-to-Source Voltage (V)
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72786.
www.vishay.com
4
Document Number: 72786
S-71661-Rev. B, 06-Aug-07
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